www.irf.com 1 11/08/05 features: rugged, lightweight near hermetic package with integrated power terminal cap gen iv igbt technology soft recovery rectifiers ultra-low thermal resistance zener gate protection very low conduction and switching loss -55c to +125c operating temperature screening to meet the intent of mil-prf-38534 class h short circuit capability 2.0 ohms series gate resistor high altitude operation, 85,000 feet above sea level at rated voltage the hirel tm int-a-pak series are isolated near hermetic power modules which combine the latestigbt and soft recovery rectifier technology. the module uses both high-speed and low vce(sat) igbt's packaged for ultra low thermal resistance junction to case. the G450HHBK06P2 powermodule consists of six igbt's and six fred's in a phase- leg or half-bridge configuration. absolute maximum ratings @ tj=25c (unless otherwise specified) parameter symbol value units collector-to-emitter voltage v ces 600 gate-to-emitter voltage v ge 20 continuous collector current @ tc = 25c 600 continuous collector current @ tc = 70c 450 isolation voltage v isol 2500 v rms a v i c product summary part number v ce i c v ce(sat) G450HHBK06P2 600v 450a 1.8 pd-97013a hirel tm int-a-pak 2, plastic G450HHBK06P2 half-bridge igbt module hirel tm int-a-pak 2 downloaded from: http:///
2 www.irf.com G450HHBK06P2 electrical characteristics @ tj = 25c (unless otherwise specified) parameter symbol test conditions min. typ. max. units off characteristics collector emitter breakdown voltage v ces v ge = 0v 6 0 0--v zero gate voltage collector current i ces v ge =0v, v ce = 600v --2 . 0m a gate emitter leakage current i ges v ge = 15v, v ce = 0v --1 0 a on characteristics gate threshold voltage v ge(th) v ce = v ge , i c = 45ma 4.0 - 7.5 collector emitter saturation voltage v ce(sat) v ge = 15v, i c = 450a -1 . 82 . 6 dynamic characteristics total gate charge qg v ce = 300v, i c = 450a, v ge = 15v -2 , 6 0 0- nc input capacitance c ies -4 8- output capacitance c oes v ge = 0v, v ce = 25v, f = 1.0mhz -3 . 0- n f reverse transfer capacitance c res -0 . 3- switching inductive load characteristics turn-on delay time td(on) - 800 900 rise time tr 460 700 turn-on losses e on v cc = 300v, i c = 450a, v ge =15v -4 5- mj turn-off delay time td(off) r g(on) = 20 ? , r g(off) =10 ? , l=100 h 2800 3400 fall time tf - 400 500 turn-off losses e off -6 0- m j diode characteristics forward voltage v f i f = 450a -1 . 21 . 8 v reverse recovery charge qrr - 9.5 12 c peak reverse recovery current irr v r =300v, i c =450a, di/dt =-1100a/ s -1 0 5- a reverse recovery time trr - 160 170 ns nsns v downloaded from: http:///
www.irf.com 3 G450HHBK06P2 thermal-mechanical specifications parameter symbol min max units igbt thermal resistance, junction to case, per switch - 0.07 diode thermal resistance, junction to case, per switch - 0.12 operating junction temperature range t j -55 150 storage temperature range t stg -55 125 screw torque - mounting screw torque - terminals module weight - 270 g c r thjc t2 6 i n - l b s - c/w module screening test or inspection comments method condition internal visual 2017 temperature cycle 1010 b 10 cycles, -55c to +125c mechanical shock 2002 b 1500g, 0.5ms, 5 times (y1 direction only) burn-in 1015 a 160 hrs @ +125c final electrical test group a, -55c, +25c, +125c external visual 2009 mil-std-883 electrical characteristics @ tj = 125c (unless otherwise specified) parameter symbol test conditions min. typ. max. units off characteristics collector emitter breakdown voltage v ces v ge = 0v 600 - - v zero gate voltage collector current i ces v ge =0v, v ce = 600v --1 8m a gate emitter leakage current i ges v ge = 15v, v ce = 0v --1 0 a on characteristics gate threshold voltage v ge(th) v ce = v ge , i c = 45ma 4.0 - 7.5 collector emitter saturation voltage v ce(sat) v ge = 15v, i c = 450a -1 . 82 . 6 diode characteristics forward voltage v f i f = 450a -1 . 21 . 8 v v downloaded from: http:///
4 www.irf.com G450HHBK06P2 schematic fig 1: maximum collector current vs case temperature t c , case temperature (c)
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www.irf.com 5 G450HHBK06P2 t1 ic vce t1 t2 90% ic 10% vce td(off) tf ic 5% ic t1+5 s vce ic d t 90% vge + vge eoff = fig. 3 - test waveforms for circuit of fig. 2, defining e off , t d(off) , t f vce ie dt t2 t1 5% vce ic ipk vcc 10% ic vce t1 t2 dut voltage and current gate voltage d.u.t. +vg 10% +vg 90% ic tr td(on) diode reverse recovery energy tx eon = erec = t4 t3 vd id dt t4 t3 diode recovery waveforms ic vpk 10% vcc irr 10% irr vc c trr qrr = trr tx id dt fig. 2 - test circuit for measurement of e on , e off , t rr , q rr , i rr , t d(on) , t r , t d(off) , t f fig. 3 - test waveforms for circuit of fig. 2, defining e on , t d(on) , t r fig. 4 - test waveforms for circuit of fig. 2, defining e rec , t rr , q rr , i rr
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6 www.irf.com G450HHBK06P2 world headquarters: 233 kansas st., el segundo, california 90245, tel: (310) 252-7105 ir leominster: 205 crawford st., leominster, massachusetts 01453, tel: (978) 534-5776 data and specifications subject to change without notice. 11/05 part numbering nomenclature notes: 1) all dimensions are in inches 2) unless otherwise specified, tolerances .xx = 0 .01, .xxx = 0.005 g 450 hh b k 06 p2 h igbt module - hirel c urrent capability 4 50 = 450 amps g eneration i gbt / fwd configuration b = gen 4 / gen 3 screening level p = unscreened, 25c electrical te st ( not intended for qualification) h = screened per mil-prf-38534 voltage 06 = 600v c ircuit configuration h h = half bridge igbt speed / sc capability k = fast, sc capable package type p2 = hirel tm int-a-pak 2, 2.5" x 4.0" x 1.0" case outline and dimensions - hirel tm int-a-pak 2 downloaded from: http:///
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